InAs (100), S-doped 10x10x0.5mm, 1sp - IASa101005S1 CdSe Back side: Fine ground
$125.35
Description
Back side: Fine ground
repeatability
Temperature 200 600 900 Cleavage 10
Coating thickness: ~131 um
Ionic Conductivity
InAs (100), S-doped 10x10x0.5mm, 1sp - IASa101005S1 CdSe Back side: Fine groundGrowth method LEC Orientation (100) Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration 1x10E18 cmE 3 Mobility 9000 cm2 V. S Standard thickness 0. 5mm Standard size 10mm x 10mm Polish one side
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, S-doped 10x10x0.5mm, 1sp - IASa101005S1 CdSe Back side: Fine ground){kind=link}
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