Al2O3- Sapphire Wafer, C-plane (0001), 0.25"x0.25"x0.5mm, 1SP - ALC060605S1 Furnaces 2 sides polished

2 sides polished

8x25ml Hi-throughput Jar is available upon request

Application Note If your slurry viscosity is high

Mullite tube can be used up to 1650 oC in both oxidizing and reduce atmospheres

Temperature control console provides up to 30 segments programmable with +/- 1 ºC accuracy

Al2O3- Sapphire Wafer, C-plane (0001), 0.25"x0.25"x0.5mm, 1SP - ALC060605S1 Furnaces 2 sides polishedFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 0. 25" x 0. 25" x 0. 5 mm thick Orientation tolerance: + 0. 5 Deg. C plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A Package: Each wafer is packed in 1000 class clean room with 100 grade