LaAlO3,(100) ori 10x10x 0.5mm substrate , 1 SP - LAOa101005S1 High-Throughput Coating

LaAlO3,(100) ori 10x10x 0.5mm substrate , 1 SP - LAOa101005S1 High-Throughput CoatingLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 10 x 10 x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5

It can seal air-sensitive samples inside the glovebox and transport the sample to the outside glovebox through an antechamber or seals the sample from the outside glovebox by vacuum pump to put it into the glovebox through the antechamber air chamber

Requires No Lubrication

Melting Point  ~200-300 °C

A: Small package will cost more from a manufacturer

Surface Polishing:             Two sides epi polished

Speed 500 to 3

Vanadium (3)

Suggested Sealing Method: (parameter below may vary from case to case)

Core Depth(N): 30 mm

95 per box

Size: 1" x 1" x 0

Thermal Expansion:                              a a= 16