US$ 1719.15
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP CdTe Doped Zn (CZT) CR2032 case and spacer shown
$206.43
Description
CR2032 case and spacer shown in picture is not included
5 mm +/- 0
Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately
Crystal Substrate A-Z
One battery testing control unit could connect up to 10 battery-and-supercapacitor analyzers
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP CdTe Doped Zn (CZT) CR2032 case and spacer shownGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: one side polished Doping: undoped Conductor type: Semi Insulating Resistivity: (1. 35 4. 21)x10^8Ohm. cm Mobility: 4360 5640cm^2 V. S EPD: <5000cm^ 2 Primary Flat: EJ(0 1 1) Secondary Flat: EJ(0 11) Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Shipping Notes
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