US$ 700.00
InAs (100), undoped 10x10x0.5mm, 1sp Boron-Nitride on Silicon Film Thickness :0
$148.35
Description
Film Thickness :0
Grinding balls
1500 ~ 2000
a separator should be placed between the two shanks of the heating element before hanging the element inside the furnace chamber
Conductor type: S-C-N
InAs (100), undoped 10x10x0.5mm, 1sp Boron-Nitride on Silicon Film Thickness :0Growth method LEC Orientation (100) + 0. 5 Orientation Flat N A Doping Undoped Conductivity type N type Carrier Concentration <3E16 cm3 Mobility >20000 cm2 V. S EPD <5E4 cm 2 Standard thickness 500+ 20 mm Standard size 10mm x 10mm Polish one side
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