Ge Single crystal substrate ,N-type Undoped (111)ori. 5x5x0.5mm 2sp,R>50 ohm.cm Al2O3 Sample Plate Ball mill or ground the

Ball mill or ground the powder to the size of 32~75 microns powder before pressing

Resistivity:                     >50 Ohms/cm

4) x 10^16 /cm^3

Power:                 110V

3% Density > 3

Ge Single crystal substrate ,N-type Undoped (111)ori. 5x5x0.5mm 2sp,R>50 ohm.cm Al2O3 Sample Plate Ball mill or ground theSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater