Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials Ingestion-build-54484 as specified in this European

as specified in this European Standard

Installers of heating

It is not intended to test equipment which forms part of the main structure

b) methods based on measurement of stable isotopic ratio

Results of interlaboratory tests

Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials Ingestion-build-54484 as specified in this European1 Scope This International Standard specifies a secondary ion mass spectrometric method for the determination of boron atomic concentration in single crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 1016 atoms cm3 to 1 1020 atoms cm3.