GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5 Aluminum Film a two-stage pressure regulator(pic1) must

a two-stage pressure regulator(pic1) must be installed on the gas cylinder to limit the pressure within the required working range for safe operation

How to install Dimension Optional  This device is for MTI ultrasonic spray head only

It is designed for use with MTI Roll-to-Roll web coaters such as MSK-AFA-E200 and MSK-AFA-EI300 for Li-ion battery electrode coating process

Polished: two  sides

One piece of 12123 aluminum case

GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5 Aluminum Film a two-stage pressure regulator(pic1) mustGaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 3" dia x 0. 625mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (1. 06 3. 96) x 10^18 cm^3 Mobility: 1420 2480 cm^2 V. S Resistivity: (1. 1 2. 38) E 3 ohm. cm EPD: <1000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces