VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp YSZ (Yittrium stabilized ZrO2) Phenolic black caps included

Phenolic black caps included

Steps to make sample pellet Mixing and grinding chemical powder by agate mortar or Ball Mill

MTI does not manufacture this product

the bottom cylinder (piston) in the cross-section illustration in the dimension section below Operation Temperature 10 - 40°C Dimensions

Part Number EQ-SC0604 Arbor Dia 0

VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp YSZ (Yittrium stabilized ZrO2) Phenolic black caps includedGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10x0. 625mm Polishing: one side polished Doping: Zn doped Conductor type: P type Carrier Concentration: (1. 3 2. 2) x 10^19 cm^3 Mobility: 64 75 cm^2 V. S EPD: <5000 cm^2 resistivity: (4. 5 6. 7)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces