Si Wafer (110) 2" dia x 0.5 mm, 2SP, P type, B doped, R:0.01-1.0 ohm-cm - SIBe50D05C2R001 Orientation C-Plane(0001) Double sides area density: 22

Double sides area density: 22 ± 0

21 mm Thickness (Li layer width 80mm

NRTL or CSA certification is available upon request at extra cost

Purity:                     99

which is very easy to operate and can provide stable performance

Si Wafer (110) 2" dia x 0.5 mm, 2SP, P type, B doped, R:0.01-1.0 ohm-cm - SIBe50D05C2R001 Orientation C-Plane(0001) Double sides area density: 22Single crystal Silicon Conductive type: P type Boron doped Resistivity: 0. 01 1. 0 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (110) + 1o Polish: Two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma