HB00700 - SEMI HB7 - Test Method for Measurement of Waviness of Crystalline Sapphire Wafers by Using Optical Probes Revision:SEMI HB7-0615 - Current Detailed information on the method

Detailed information on the method is found in ASTM G48

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org in November 2004

この文書の目的は，半導体製造環境の中で静電気電荷および電界に起因した生産性への悪影響を最小にすることである｡本文書は，半導体工場全体の静電気的な両立性を確立するためのガイドである｡半導体製造に使われる装置の静電気的な両立性は，SEMI E78に述べている。

Similar requirements and options covering load ports for wafers are covered in SEMI E15 (for 200 mm wafers and smaller) and in SEMI E15

HB00700 - SEMI HB7 - Test Method for Measurement of Waviness of Crystalline Sapphire Wafers by Using Optical Probes Revision:SEMI HB7-0615 - Current Detailed information on the methodThis Standard was technically approved by the HB LED Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on May 19, 2015. Available at www. semiviews. org and www. semi. org in June 2015. Crystalline sapphire wafers (CSW) are used as substrates for manufacturing compound semiconductor devices, in particular high brightness light emitting diodes (HB LED). In SEMI HB1 a multitude of